FGPF70N30

FGPF70N30

  • Description:IGBT 300V 52W TO220F
  • Series:-

SKU:da61181e2d4e Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 300V 52W TO220F
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:1.5V @ 15V, 20A
  • Power - Max:52 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:71 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Grade:-
  • Qualification:-

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FGPF70N30

Overview

The FGPF70N30 is a 300V N-Channel Power MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain current of 70A and a typical on-resistance of 55mΩ at VGS=10V. The device utilizes SuperFET technology to achieve low gate charge and high switching speed. It is housed in a TO-262AA (I2PAK) package, providing robust thermal performance for power conversion applications.

Feature Summary

  • SuperFET technology for enhanced efficiency
  • Low gate charge for fast switching
  • High avalanche energy capability

Applications

  • DC-DC converters
  • Motor control circuits
  • Power factor correction

Procurement Notes

Verify the manufacturer source carefully as Fairchild's semiconductor division was acquired by ON Semiconductor. Ensure the component matches the original Fairchild specifications if used in legacy designs. Check for updated marking codes or packaging variations that may indicate the post-acquisition production run.

Selection Notes

Select this component when a 300V rating with 70A continuous current capacity is required. The 55mΩ on-resistance offers a balance between conduction loss and cost. Consider the TO-262AA package for through-hole mounting requirements where higher current handling is needed compared to surface mount options.

Part Context

This part belongs to the Fairchild SuperFET series, designed for high-efficiency power switching. It represents an evolution in trench MOSFET technology, offering improved figure-of-merit compared to standard planar devices. The FGPF70N30 is specifically optimized for applications demanding reliable performance under high voltage stress.

Replacement Considerations

Direct replacements include FQPF70N30 or equivalent parts from ON Semiconductor following the acquisition. Verify pinout compatibility and thermal resistance values before substitution.

FGPF70N30FGPF70N30

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