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Product Detailed Parameters
- Description：IGBT FS 1200V 200A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 100A
- Power - Max：1495 W
- Switching Energy：8.13mJ (on), 7.05mJ (off)
- Input Type：Standard
- Gate Charge：427 nC
- Td (on/off) @ 25°C：80ns/364ns
- Test Condition：600V, 100A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：347 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGY100T120RWD is a single N-channel Field Stop VII (FS7) IGBT with an integrated Gen7 Diode, housed in a TO-247-3LD package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 200 A at 25°C. The device exhibits a maximum saturation voltage of 1.75 V at 100 A and 15 V gate drive. Switching losses are rated at 8.13 mJ for turn-on and 7.05 mJ for turn-off under standard test conditions. It supports a maximum junction temperature of 175°C and includes short-circuit withstand capability.
Feature Summary
- Utilizes Field Stop VII technology to achieve low conduction losses and optimized switching performance.
- Features positive temperature coefficient characteristics to facilitate easy parallel operation.
- Includes an integrated Gen7 Diode designed for smooth transitions and clear control.
- All units undergo dynamic testing and are rated for short-circuit protection.
Applications
- Motor Control
- Uninterruptible Power Supplies (UPS)
- High-Power Switching Applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm thermal resistance values match the intended heatsink design. Ensure gate drive voltages remain within the specified ±20 V limit to prevent damage. Validate that the application current does not exceed the pulsed collector current rating during transient events.
Selection Notes
Select this component for designs requiring high efficiency in medium-to-high power conversion. The FS7 technology offers improved performance over previous generations. Consider the thermal impedance curves when designing the cooling system. Verify that the gate resistance allows for optimal switching speed without exceeding safe operating area limits.
Part Context
This discrete IGBT belongs to onsemi's FS7 product line, which targets industrial and energy infrastructure markets. It complements other FS7 devices like the FGY140T120SWD by offering a balance of conduction and switching performance in a standard through-hole package suitable for general-purpose high-power switching.
Replacement Considerations
Direct replacements must match the 1200V/200A rating and TO-247-3LD footprint. Compare Vce(sat) and switching energies to ensure equivalent or better efficiency. Verify pinout compatibility and thermal characteristics before substitution.
FAQ
What is the maximum short-circuit withstand time?
The device has a short-circuit withstand time of 5 microseconds at a junction temperature of 150°C, with Vge = 15 V and Vcc = 600 V.
Does the FGY100T120RWD have a positive temperature coefficient?
Yes, the datasheet specifies a positive temperature coefficient for the IGBT, which aids in stable parallel operation.
What is the typical total gate charge?
The typical total gate charge (Qg) is 427 nC, measured at Vce = 600 V, Vge = 15 V, and Ic = 100 A.
