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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 200A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 100A
- Power - Max：750 W
- Switching Energy：5.4mJ (on), 3.8mJ (off)
- Input Type：Standard
- Gate Charge：157 nC
- Td (on/off) @ 25°C：84ns/216ns
- Test Condition：400V, 100A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：62 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGY100T65SCDT is a single Insulated Gate Bipolar Transistor (IGBT) module from the FS3 series, designed for high-power switching applications. It features a maximum collector-emitter voltage of 650V and a continuous collector current rating of 100A at 25°C. The device integrates an Auto-Steep Diode to optimize reverse recovery characteristics, reducing switching losses in hard-switching topologies. Key electrical parameters include a typical saturation voltage of 1.9V and a power dissipation capacity of 714W. It operates within a temperature range of -55°C to +175°C junction temperature and utilizes a through-hole mounting style for robust thermal management.
Feature Summary
- Integrates an Auto-Steep Diode for optimized reverse recovery performance and reduced switching losses
- Utilizes Stealth Diode technology to enhance efficiency in high-frequency switching applications
- Designed for high thermal stability with a maximum junction temperature of 175°C
- Single IGBT configuration suitable for compact power module designs
Applications
- High-efficiency motor drives and traction inverters
- Industrial power supplies and switch-mode power supplies
- Uninterruptible power supplies (UPS) systems
- Solar inverters and renewable energy conversion systems
Procurement Notes
Verify the specific suffix 'CDT' against the official datasheet to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering documentation explicitly references the FS3 series characteristics. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status if required by your manufacturing standards.
Selection Notes
Select this component when a 650V IGBT with integrated fast-recovery diode is required for hard-switching applications. Compare the 100A current rating against the peak load requirements of the target circuit. Evaluate the thermal resistance values provided in the datasheet against the available heatsinking infrastructure. Consider the gate charge parameters for driver capability assessment.
Part Context
This part belongs to onsemi's FS3 series of high-performance IGBT modules. The series is characterized by the integration of advanced diode technologies aimed at improving overall system efficiency. These modules are engineered for demanding industrial and automotive environments where reliability and low conduction losses are critical design constraints.
Replacement Considerations
Check for direct substitutes within the same FS3 family or other 650V IGBT modules with identical pinouts and thermal footprints. Verify that any replacement maintains the same current rating and voltage class. Ensure that the alternative component's switching characteristics are compatible with the existing gate drive circuitry.
