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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：882 W
- Switching Energy：2.7mJ (on), 1.1mJ (off)
- Input Type：Standard
- Gate Charge：370 nC
- Td (on/off) @ 25°C：40ns/475ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：65 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The FGY40T120SMD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field Stop Trench technology and is housed in a TO-247-3 package for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 40 A at 25°C, with a pulsed current capacity of 80 A. Key electrical parameters include a saturation voltage (VCE(sat)) of 1.8 V at 40 A, a gate-emitter leakage current of 400 nA, and a maximum power dissipation (Pd) of 882 W. The operating junction temperature range spans from -55°C to +175°C.
Feature Summary
- Field Stop Trench IGBT technology for optimized switching performance
- Positive temperature coefficient for safe parallel operation
- High input impedance gate structure
- RoHS compliant manufacturing
Applications
- Motor drive inverters
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and testing specifications. Confirm that the component meets RoHS standards if required by the design. Check for any recent Product Change Notifications (PCN) regarding pinout or material changes before finalizing procurement plans.
Selection Notes
Select this component when a high-voltage, high-current switching solution is required in a standard TO-247 footprint. Ensure the thermal management system can handle the 882 W power dissipation rating under worst-case conditions. Verify that the gate drive voltage aligns with the specified limits for optimal VCE(sat) performance.
Part Context
This part belongs to onsemi's FS2 series of Field Stop IGBTs. It is designed for medium-power applications requiring robust performance. The SMD suffix indicates specific packaging characteristics within the TO-247 family, distinguishing it from other variants in the same voltage and current class.
Replacement Considerations
Direct replacements must match the 1.2 kV / 40 A specification and TO-247-3 package. Consider the FGH40T120SMD for similar performance with potentially different thermal characteristics. Verify pin compatibility and switching energy values before substitution.
