FGY4L140T120SWD

$9.85

Description：IGBT FS 1200V 200A TO-247-4L
Series：-

SKU:2c84f1f58bb5 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT FS 1200V 200A TO-247-4L
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：200 A
Current - Collector Pulsed (Icm)：560 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 140A
Power - Max：1250 W
Switching Energy：3.9mJ (on), 4.6mJ (off)
Input Type：Standard
Gate Charge：426 nC
Td (on/off) @ 25°C：60.8ns/232ns
Test Condition：600V, 140A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：266.9 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4L
Grade：-
Qualification：-

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FGY4L140T120SWD

Overview

The FGY4L140T120SWD is a single N-channel Field Stop VII (FS7) IGBT with an integrated Gen7 Diode, housed in a TO-247-4L package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 140 A at 100°C. The device exhibits a typical saturation voltage of 1.7 V at 25°C and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.12 °C/W for the IGBT and 0.2 °C/W for the diode. Total switching loss reaches 8.5 mJ at 140 A, while reverse recovery energy is 2.4 mJ.

Feature Summary

Field Stop VII technology combined with Gen7 Diode for optimized performance
Positive temperature coefficient enabling easy parallel operation
Smooth and optimized switching characteristics
High current capability with low conduction losses

Applications

Solar Inverter
UPS
Energy Storage System

Procurement Notes

Verify component authenticity by checking the marking diagram against the physical device. Confirm the date code and assembly lot match the supplier's documentation. Ensure the TO-247-4L package dimensions align with CASE 340BW specifications before integration into the design.

Selection Notes

Select this component when high efficiency and thermal stability are required. The FS7 technology provides lower switching losses compared to previous generations. Verify that the gate drive circuit can handle the total gate charge of 426 nC. Ensure the application operates within the 1200 V rating and respects the pulsed current limits defined in the datasheet.

Part Context

This part belongs to onsemi's FS7 IGBT family, designed for high-efficiency power conversion. It utilizes advanced field stop architecture to reduce both conduction and switching losses. The inclusion of a Gen7 Diode complements the IGBT for improved overall system performance in hard-switching applications.

Replacement Considerations

Direct replacements must match the 1200 V rating, TO-247-4L package, and similar electrical characteristics. Verify pinout compatibility, specifically the four-lead configuration. Check if alternative parts offer comparable switching speeds and thermal resistance values.