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Product Detailed Parameters
- Description：IGBT FS 1200V 150A TO-247-4L
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：652 W
- Switching Energy：2.9mJ (on), 2.1mJ (off)
- Input Type：Standard
- Gate Charge：225.6 nC
- Td (on/off) @ 25°C：65.6ns/241.6ns
- Test Condition：600V, 75A, 11.5Ohm, 15V
- Reverse Recovery Time (trr)：208 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4L
- Grade：-
- Qualification：-
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Overview
The FGY4L75T120SWD is an N-Channel Field Stop VII (FS7) IGBT with a Gen7 Diode, packaged in TO247-4L. It offers low switching and conduction losses for high-efficiency operations in Solar Inverters, UPS, and ESS. Key electrical parameters include a Collector-to-Emitter Voltage (VCE) of 1200 V, a Collector Current (IC) of 150 A at TC = 25°C, and a typical Collector-to-Emitter Saturation Voltage (VCE(sat)) of 1.7 V at TJ = 25°C. The device supports a maximum junction temperature of 175°C and features a thermal resistance from junction to case of 0.23 °C/W.
Feature Summary
- Maximum Junction Temperature TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Smooth and Optimized Switching
- Low Switching Loss
- RoHS Compliant
Applications
- Solar Inverter
- UPS
- Energy Storage System
Procurement Notes
Verify the specific ordering suffix and package type against official onsemi documentation before procurement. Confirm that the TO247-4L pinout matches the target circuit design requirements. Ensure compliance with RoHS standards if environmental regulations apply to the final assembly. Cross-reference the part number with authorized distributors to guarantee authenticity and traceability.
Selection Notes
Select this component for applications requiring high efficiency and robust parallel operation capabilities. Consider the 1200 V rating and 150 A current capacity when designing power stages. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance. Verify gate drive compatibility with the provided dynamic characteristics and switching loss data.
Part Context
This device belongs to onsemi's FS7 IGBT family, utilizing advanced field stop technology to minimize energy waste. It is designed for high-power conversion systems where efficiency and reliability are critical. The integration of the Gen7 Diode complements the IGBT performance, ensuring smooth transitions and clear control in demanding power electronics environments.
Replacement Considerations
Check for direct substitutes within the same FS7 series or comparable 1200 V IGBTs from other manufacturers. Ensure equivalent voltage, current ratings, and package dimensions. Verify thermal and electrical characteristics match the original design specifications to maintain system performance and safety margins.
