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The FGY75T95LQDT is a Field Stop IGBT manufactured by onsemi, housed in a TO-247-3 package. It features a collector-emitter breakdown voltage of 950 V and a continuous collector current rating of 75 A at 25 °C. The device exhibits a maximum collector-emitter saturation voltage of 1.95 V and a gate charge of 399 nC. Thermal performance includes a power dissipation capacity of 790 W and an operating junction temperature range from -55 °C to 175 °C. The component utilizes through-hole mounting for robust mechanical integration.
Verify the specific suffix 'QDT' against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with standard TO-247-3 footprints during PCB layout. Confirm RoHS compliance status directly with the supplier as regulatory requirements may vary by region and production batch date.
Select this component when a 950 V blocking capability is required alongside a 75 A continuous current rating. The 1.95 V saturation voltage offers a balance between conduction loss and switching speed suitable for general-purpose industrial frequencies. Verify that the 790 W power dissipation rating aligns with the available heatsinking infrastructure in the target design.
This part belongs to the FGY series of Field Stop IGBTs from onsemi. The series is designed for medium-power switching applications requiring reliable performance under high thermal stress. The TO-247-3 package provides a standardized form factor for easy integration into existing power modules and discrete designs within the same voltage and current class.
Direct substitutes must match the 950 V rating, 75 A current capacity, and TO-247-3 package. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with other manufacturers offering equivalent Field Stop IGBTs in the same voltage class.