FJE3303H2TU

Single Bipolar Transistors Overview

The onsemi FJE3303H2TU is a single NPN bipolar junction transistor (BJT) designed for high-voltage switching applications. It features a maximum collector-emitter voltage (VCEO) of 400 V and a collector-base voltage (VCBO) of 700 V, with an emitter-base voltage (VEBO) rating of 9 V. The device supports a maximum DC collector current of 1.5 A and a power dissipation (Pd) of 20 W. Key electrical parameters include a transition frequency (fT) of 4 MHz and a minimum DC current gain (hFE) of 5. It operates within a temperature range of -65 °C to +150 °C and utilizes a TO-126-3 through-hole package.

Single Bipolar Transistors Feature Summary

• High voltage capability with 400 V collector-emitter and 700 V collector-base ratings
• Robust thermal performance supporting up to 20 W power dissipation
• Designed for high-temperature operation up to 150 °C junction temperature

Single Bipolar Transistors Applications

• High voltage switch mode power supplies
• Flyback converter circuits
• General purpose high voltage switching

Single Bipolar Transistors Procurement Notes

Verify the specific suffix H2TU against official datasheets to confirm pinout and packaging details, as variations exist within the FJE3303 family. Confirm RoHS compliance status via the manufacturer's declaration. Check for obsolete notices or production change notifications (PCN) regarding assembly sites, as availability may be limited.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling in a through-hole format. Ensure the thermal management design accommodates the 20 W dissipation limit at the expected ambient temperature. Verify that the required hFE meets the minimum specification of 5 for the intended drive conditions.

Single Bipolar Transistors Part Context

This part belongs to the FJE3303 series of high-voltage NPN transistors manufactured by onsemi. The series is characterized by its ability to handle high voltages while maintaining stable performance in switching applications. The TO-126 package provides a balance between power handling and mounting flexibility for industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

The FJPF3305H2TU is a related device in the same family but offers higher current capacity (4 A) and uses a TO-220F-3 package. Direct substitution requires verifying mechanical fit and ensuring the higher current rating does not impact circuit design constraints.