Single Bipolar Transistors FJP13007H1 product image

FJP13007H1

$0.26
  • Description:TRANS NPN 400V 8A TO-220-3
  • Series:-

SKU:cc9de56ba359 Category: Brand:

  
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FJP13007H1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 8A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJP13007H1

  • Description:TRANS NPN 400V 8A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 2A, 8A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 2A, 5V
  • Power - Max:80 W
  • Frequency - Transition:4MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for FJP13007H1

FJP13007H1

Single Bipolar Transistors Overview

The FJP13007H1 is a discontinued high voltage fast-switching NPN power transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 400 V and a continuous collector current rating of 8 A. The device supports a maximum collector dissipation of 80 W at 25°C case temperature and operates up to a junction temperature of 150°C. It utilizes a TO-220 3L single gauge rail package. Electrical characteristics include a DC current gain (hFE) range of 15 to 28 for the H1 classification, a transition frequency of 4 MHz, and a turn-on time of 1.6 μs under specified test conditions.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a 400 V collector-emitter breakdown voltage
  • Fast switching speed suitable for high-frequency applications
  • Optimized for electronic ballast and switching mode power supply circuits

Single Bipolar Transistors Applications

  • Electronic ballasts
  • Switching mode power supplies

Single Bipolar Transistors Procurement Notes

This component is officially discontinued and not recommended for new designs. Verify availability through authorized distributors or onsemi representatives. Confirm that legacy stock meets specific application requirements before procurement. Ensure compliance with RoHS standards as indicated in historical documentation.

Single Bipolar Transistors Selection Notes

Select this component only for maintenance or replacement of existing equipment where design changes are restricted. Evaluate alternative active components if redesigning the circuit. Consider the specific hFE1 classification range of 15 to 28 when designing base drive circuits to ensure proper saturation.

Single Bipolar Transistors Part Context

The FJP13007 series belongs to onsemi's lineup of high voltage fast-switching NPN power transistors. The H1 suffix denotes a specific DC current gain binning classification. This device was engineered for robust performance in high-voltage switching environments, utilizing multi-epitaxial planar technology for enhanced speed and reliability.

Single Bipolar Transistors Replacement Considerations

MJE13007G is an active equivalent part number from onsemi offering similar electrical specifications.

FJP13007H1FJP13007H1
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