Single Bipolar Transistors FJP2160DTU product image

FJP2160DTU

$0.56
  • Description:TRANS NPN 800V 2A TO-220-3
  • Series:ESBC™

SKU:2fafb5642c94 Category: Brand:

  
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FJP2160DTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 800V 2A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJP2160DTU

  • Description:TRANS NPN 800V 2A TO-220-3
  • Series:ESBC™
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):800 V
  • Vce Saturation (Max) @ Ib, Ic:750mV @ 330mA, 1A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 400mA, 3V
  • Power - Max:100 W
  • Frequency - Transition:5MHz
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for FJP2160DTU

FJP2160DTU

Single Bipolar Transistors Overview

The FJP2160DTU is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for high-voltage applications with a collector-emitter voltage rating of 800 V and a continuous collector current capacity of 2 A. The device features a transition frequency of 5 MHz and supports a power dissipation of 100 W. It is housed in a TO-220-3 through-hole package, suitable for robust industrial and power supply implementations.

Single Bipolar Transistors Feature Summary

  • High-voltage NPN configuration rated at 800 V
  • Robust 100 W power dissipation capability
  • Through-hole TO-220-3 packaging for secure mounting

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Industrial power supply designs
  • General-purpose amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the exact datasheet revision and electrical characteristics directly from the manufacturer's official documentation before integration. Confirm that the TO-220-3 package dimensions and thermal requirements align with your specific PCB layout and cooling infrastructure to ensure reliable operation under load conditions.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with an 800 V breakdown voltage and 2 A current handling is required. Ensure the application operates within the 100 W thermal limits and utilizes a TO-220-3 compatible footprint. Validate that the 5 MHz transition frequency meets the speed requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the single bipolar transistor category. It serves as a fundamental active component for managing high voltages in electronic systems, providing a reliable solution for power control and signal amplification tasks in demanding environments.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the 800 V rating, 2 A current limit, and TO-220-3 form factor to guarantee compatibility with existing board layouts and thermal management strategies.

FJP2160DTUFJP2160DTU
$0.56
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