Single Bipolar Transistors FJP3305TU product image

FJP3305TU

  • Description:TRANS NPN 400V 4A TO-220-3
  • Series:-

SKU:5c3f22e7d188 Category: Brand:

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FJP3305TU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 4A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJP3305TU

  • Description:TRANS NPN 400V 4A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 1A, 4A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:19 @ 1A, 5V
  • Power - Max:75 W
  • Frequency - Transition:4MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for FJP3305TU

FJP3305TU

Single Bipolar Transistors Overview

The onsemi FJP3305TU is a single NPN bipolar junction transistor designed for through-hole mounting in TO-220F packages. It supports a maximum DC collector current of 4 A and a collector-emitter voltage rating of 400 V. The device features a maximum power dissipation of 30 W and a transition frequency of 4 MHz. Key electrical characteristics include a minimum DC current gain ranging from 19 to 26, a maximum collector-base voltage of 700 V, and a maximum emitter-base voltage of 9 V. It operates at temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

  • High-voltage capability with a 400 V collector-emitter breakdown rating
  • Robust thermal performance supporting 30 W power dissipation
  • Suitable for high-frequency switching applications up to 4 MHz

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Power supply output stages
  • Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official datasheets, as variations like H1TU or H2TU may exist. Confirm RoHS compliance status and check for obsolete notices, as specific variants have been marked discontinued by distributors. Ensure the TO-220F package matches your board layout requirements before ordering.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 400 V blocking capability and 4 A continuous current handling is required. The TO-220F package provides adequate heat sinking for 30 W dissipation. Compare the 4 MHz transition frequency against your circuit speed needs and ensure the 700 V collector-base voltage exceeds your peak reverse bias conditions.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete bipolar transistor portfolio, specifically engineered for general-purpose high-voltage applications. The TO-220F form factor is standard for medium-power electronics, allowing direct heatsink attachment. It serves as a fundamental switching element in linear and switching power topologies requiring reliable NPN conduction.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and absolute maximum ratings if considering alternative manufacturers' equivalents.

FJP3305TUFJP3305TU

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