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Product Detailed Parameters
- Description：JFET N-CH 20V 1MA SOT623F
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：20 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：150 µA @ 5 V
- Current Drain (Id) - Max：1 mA
- Voltage - Cutoff (VGS off) @ Id：600 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：3.5pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：100 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-623F
- Supplier Device Package：SOT-623F
- Grade：-
- Qualification：-
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Overview
The FJZ594JBTF is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, formerly Fairchild Semiconductor. It is designed for low-noise applications and housed in a SOT-623F surface-mount package. The device features a maximum drain current of 1 mA and a power dissipation rating of 100 mW at 25°C. Key electrical characteristics include a gate-drain breakdown voltage of -20 V and a typical forward transfer admittance of 1.2 mS at 1 MHz. The input capacitance is specified at 3.5 pF under standard test conditions.
Feature Summary
- Engineered specifically for capacitor microphone applications with excellent voltage and transient characteristics.
- Provides low output noise voltage suitable for sensitive audio signal processing.
- Utilizes a compact SOT-623F surface-mount package for efficient board space utilization.
Applications
- Audio capacitor microphones
- Telephone capacitor microphones
Procurement Notes
Verify the component status as obsolete within the manufacturer's portfolio before initiating procurement. Confirm that the specific suffix 'BTF' corresponds to the required tape-and-reel packaging format rather than bulk supply. Ensure compatibility with RoHS3 standards if environmental compliance is mandatory for the target assembly process.
Selection Notes
Select this component when designing circuits requiring low-noise amplification for high-impedance sensors like condenser microphones. Evaluate the forward transfer admittance and input capacitance against the required bandwidth and gain specifications. Ensure the operating junction temperature remains within the 150°C limit during thermal analysis.
Part Context
This part belongs to the FJZ594 series of silicon N-channel JFETs originally developed by Fairchild Semiconductor. The series is characterized by its use in pre-amplifier stages for acoustic transducers. The manufacturer has since transitioned to onsemi following corporate restructuring, maintaining the legacy design specifications for existing production runs.
Replacement Considerations
No official substitute part numbers are documented in the provided datasheet. Engineers should evaluate other N-channel JFETs with similar pinouts and electrical parameters, ensuring that the replacement meets the specific noise and capacitance requirements of the original design.
FAQ
What is the maximum gate-drain breakdown voltage?
The maximum gate-drain breakdown voltage (BVGDO) is -20 V when tested with a gate current of -100 µA.
What is the typical forward transfer admittance?
The typical forward transfer admittance (|yfs|) is 1.2 mS at a frequency of 1 MHz with VDS=5V and VGS=0.
Is this component suitable for life support devices?
No, the product is not authorized for use as a critical component in life support devices or systems without express written approval from the manufacturer.
