FL06150G

$4.68

Description：SICFET N-CH 650V 15A PDFN8x8
Series：Lightning
Mfr：fastSiC
Package：Tape & Reel (TR)

SKU:96cc5584684c Category: Single FETs, MOSFETs Brand: fastSiC

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Product introduction

FL06150G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 15A PDFN8x8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FL06150G

Description：SICFET N-CH 650V 15A PDFN8x8
Series：Lightning
Mfr：fastSiC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 15V
Vgs(th) (Max) @ Id：2V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：29.5 nC @ 12 V
Vgs (Max)：15V
Input Capacitance (Ciss) (Max) @ Vds：672 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-PDFN (8x8)
Package / Case：4-PowerTSFN

Single FETs, MOSFETs datasheet and documents for FL06150G

FL06150G

Single FETs, MOSFETs Overview

The FL06150G is a Silicon Carbide MOSFET from the Falcon Series by Fast SiC Semiconductor Inc., housed in a PDFN 8x8 package. It features a drain-source voltage of 650V and a typical on-state resistance of 150mΩ at 25°C. The device supports a continuous drain current of 15A and a pulse current of 30A, with power dissipation rated at 68W. Key electrical parameters include a total gate charge of 29.5nC, output capacitive charge of 24.4nC, and an avalanche energy capability of 113mJ. Operating temperatures range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Optimized RDS(on) combined with rapid switching behavior for high efficiency
Low profile and low parasitic inductance packaging design
High avalanche endurance capability for robust operation
Compatible with standard 12V gate drivers

Single FETs, MOSFETs Applications

Switching Mode Power Supply
Power Factor Correction
Telecom Power
Renewable Energy Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking matches the datasheet requirements for the PDFN 8x8 configuration. Confirm that the component meets RoHS compliance and halogen-free standards as specified in the official documentation. Ensure the selected part aligns with the recommended operating values for gate-source voltage and junction temperature limits provided by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component based on its 650V rating and 150mΩ on-resistance for efficient power conversion. Consider the thermal impedance characteristics when designing heat dissipation solutions. Evaluate the gate charge and switching energy parameters against the target switching frequency and external gate resistance requirements to optimize system performance.

Single FETs, MOSFETs Part Context

This device belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series includes variants with different packages, such as TO-252 (DPAK) and PQFN 5x6, offering flexibility for various power density applications. The FL06150G specifically utilizes the PDFN 8x8 package to balance thermal performance and footprint size.

Single FETs, MOSFETs Replacement Considerations

For comparable products, contact Fast SiC Semiconductor Inc. directly via their official website. No specific substitute part numbers are listed in the public datasheet.