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The FMB2227A is a dual complementary bipolar junction transistor (BJT) array manufactured by onsemi, featuring one NPN and one PNP transistor within a single SuperSOT-6 surface-mount package. It supports a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V for both polarities. The device exhibits a transition frequency of 250MHz and a maximum power dissipation of 700mW. DC current gain is specified at a minimum of 30 when tested at 300mA and 10V. The saturation voltage reaches a maximum of 1.4V under conditions of 30mA base current and 300mA collector current. Operating junction temperature ranges from -55°C to 150°C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material declarations prior to final procurement decisions. Check for any recent product change notices regarding marking or封装 updates that may affect assembly processes.
Select this component when a matched NPN/PNP pair is required in a small footprint. Ensure the 30V voltage rating and 500mA current capacity meet the circuit requirements. Consider the 700mW power dissipation limit and thermal management needs for the chosen application environment.
This part belongs to the FMB2227 family of complementary BJT arrays. It serves as a surface-mount alternative to through-hole dual transistors, offering improved PCB density. The SuperSOT-6 package provides electrical performance comparable to larger packages while minimizing board space.
Direct substitutes include other SuperSOT-6 complementary BJT arrays from various manufacturers. Verify pinout compatibility and electrical parameters such as Vceo, Ic, and hFE before substitution.