FMB5551

Overview

The FMB5551 is a dual NPN bipolar junction transistor array manufactured by onsemi. It features a maximum collector-emitter breakdown voltage of 160V and a continuous collector current rating of 600mA. The device operates with a transition frequency of 300MHz and dissipates up to 700mW of power. It is housed in a SuperSOT-6 surface-mount package, which corresponds to the SOT-23-6 form factor. The component supports a maximum junction temperature of 150°C and maintains a minimum DC current gain of 80 at specified test conditions.

Feature Summary

• Dual NPN configuration within a compact surface-mount footprint
• High voltage handling capability suitable for demanding switching applications
• Optimized thermal performance through efficient package design

Applications

• General-purpose switching circuits
• Driver stages for low-power loads
• Signal processing interfaces requiring dual complementary elements

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking configurations. Confirm RoHS compliance status and material declarations prior to integration into final assemblies. Cross-reference datasheet revisions to account for any recent manufacturing or marking changes documented by onsemi.

Selection Notes

Select this component when a dual NPN topology is required within a limited board area. The 160V rating distinguishes it from standard low-voltage arrays. Ensure the application current remains below the 600mA limit and that thermal management accommodates the 700mW dissipation capability in the SuperSOT-6 package.

Part Context

This part belongs to the FMB55 series of dual transistor arrays produced by onsemi. The series provides integrated solutions for space-constrained designs requiring multiple active elements. The FMB5551 specifically offers high-voltage capabilities compared to lower-rated variants in the same family.

Replacement Considerations

Direct pin-compatible substitutes include the MMBT5551Q-7 from Diodes Incorporated. Note that the MMBT5551Q-7 utilizes a single-transistor SOT-23-3 package rather than the dual SuperSOT-6 format, requiring circuit redesign.