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Product Detailed Parameters
- Description：TRANS 2NPN 160V 600MA SUPERSOT6
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：160V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：700mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SuperSOT™-6
- Grade：-
- Qualification：-
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Overview
The FMBM5551 is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum collector-emitter breakdown voltage of 160V and a continuous collector current rating of 600mA. The device operates with a transition frequency of 300MHz and supports a maximum power dissipation of 700mW. Packaged in a SuperSOT-6 surface-mount configuration, it provides two independent NPN transistors within a single compact footprint. The component is rated for junction temperatures up to 150°C and includes a minimum DC current gain of 80 at specified test conditions.
Feature Summary
- Dual NPN configuration providing two independent switching elements in one package
- High-voltage capability suitable for demanding circuit applications
- Surface-mount SuperSOT-6 packaging for automated assembly
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Signal amplification in low-power systems
Procurement Notes
Verify the exact part number spelling against official manufacturer documentation, as standard industry listings typically reference the FMB5551 variant. Confirm RoHS compliance status and specific marking codes via the latest datasheet revision before procurement. Ensure the ordering suffix matches the required tape-and-reel or cut-tape packaging format for your production line.
Selection Notes
Select this component when a dual NPN topology is required within a limited board area. The 160V rating distinguishes it from lower-voltage general-purpose alternatives. Verify that the 700mW thermal dissipation limit aligns with your system's ambient temperature constraints and PCB copper pour capabilities for adequate heat spreading.
Part Context
This component belongs to the FMB55 series of high-voltage dual NPN transistors. It shares functional similarities with other members of the family but is distinguished by its specific pinout and SuperSOT-6 package dimensions. The series is designed to replace discrete dual-transistor solutions, reducing component count and assembly complexity in compact electronic designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with the FMB5551 datasheet for potential equivalent devices from other manufacturers if supply constraints exist.
