FMG2G150US60E

Overview

The FMG2G150US60E is a single IGBT power module manufactured by Fairchild Semiconductor, now part of onsemi. It features a 600V collector-emitter voltage rating and a continuous collector current of 150A at 25°C case temperature. The device includes an integrated fast and soft anti-parallel freewheeling diode (FWD). Key electrical parameters include a saturation voltage of 2.2V at 150A and a short circuit withstand time of 10µs at 100°C. Packaged in the 7PM-GA format, it offers low conduction and switching losses suitable for high-power applications.

Feature Summary

• Short circuit ruggedness rated for 10 microseconds at 100°C case temperature
• Integrated fast and soft anti-parallel freewheeling diode for efficient commutation
• UL certified component ensuring compliance with safety standards
• High input impedance combined with low saturation voltage for optimized efficiency

Applications

• AC and DC motor controls
• General purpose inverters
• Uninterruptible power supplies (UPS)
• Robotics systems
• Servo controls

Procurement Notes

Verify the manufacturer status carefully as this component originates from Fairchild Semiconductor, which was acquired by onsemi. Confirm that the specific revision matches your design requirements. Check for obsolescence notices or lifecycle changes since the original publication date. Ensure sourcing channels provide authentic parts to avoid counterfeit risks associated with legacy semiconductor components.

Selection Notes

Select this module when designing circuits requiring robust short-circuit protection up to 10 microseconds. Evaluate thermal management needs based on the junction-to-case thermal resistance values provided in the datasheet. Consider the gate charge characteristics for driver selection to optimize switching speeds. Verify that the package dimensions align with your mechanical constraints and heat sink interface specifications.

Part Context

This component belongs to the Fairchild STAR*POWER series of IGBT modules. It utilizes advanced silicon technology to deliver high performance in power conversion applications. The module integrates both the IGBT switch and the anti-parallel diode into a single compact package, simplifying assembly and reducing parasitic inductance compared to discrete solutions.

Replacement Considerations

Direct replacements may be limited due to the acquisition of Fairchild by onsemi. Review onsemi's current portfolio for equivalent 600V/150A modules with similar pinouts and thermal characteristics. Cross-reference specifications such as Vce(sat), switching times, and package dimensions to ensure compatibility with existing designs.