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Product Detailed Parameters
- Description：INSULATED GATE BIPOLAR TRANSISTO
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Configuration：Three Phase Inverter with Brake
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 30A
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Power - Max：104 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.1 nF @ 30 V
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Overview
The FMM7G30US60N is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 30A. The device exhibits a maximum on-state voltage drop of 2.7V when tested at a gate-emitter voltage of 15V and a collector current of 30A. This component is designed for high-power switching applications requiring robust performance.
Feature Summary
- Insulated Gate Bipolar Transistor technology combining MOS input impedance with bipolar conduction characteristics
- High voltage capability suitable for demanding power conversion environments
- Designed for efficient switching operations in industrial power systems
Applications
- Industrial motor drives and control systems
- Uninterruptible power supply (UPS) units
- High-frequency switching power supplies
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor's discrete and module portfolio has been integrated into ON Semiconductor. Confirm that the specific suffix matches the required electrical specifications and pinout configuration for your design. Ensure the source provides valid traceability documentation consistent with current industry standards for power modules.
Selection Notes
Select this module for applications requiring a balance of high voltage blocking and moderate current handling. The 600V rating supports standard AC line voltages, while the 30A capacity suits medium-power loads. Consider thermal management requirements due to the 2.7V on-state voltage drop, which impacts efficiency and heat dissipation needs in compact enclosures.
Part Context
This IGBT module belongs to the family of power semiconductor devices used in medium-power electronics. It represents the transition period where Fairchild products were distributed under the ON Semiconductor brand. The module format allows for direct mounting onto heatsinks, facilitating better thermal performance compared to discrete packages in similar power classes.
Replacement Considerations
Direct cross-replacement requires matching the 600V/30A specification and physical footprint. Verify compatibility with existing gate drive circuits, as threshold voltages may vary slightly between different manufacturers' IGBT technologies. Consult official substitution guides from ON Semiconductor for validated equivalent part numbers.
