FMMT413TD

$5.36

Description：TRANS NPN 50V 0.1A SOT-23-3
Series：-

SKU:283fec356b19 Category: Single Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

FMMT413TD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 50V 0.1A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FMMT413TD

Description：TRANS NPN 50V 0.1A SOT-23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN - Avalanche Mode
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：150mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
Power - Max：330 mW
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for FMMT413TD

FMMT413TD

Single Bipolar Transistors Overview

The FMMT413TD is an NPN silicon planar avalanche transistor manufactured by Diodes Incorporated, housed in a SOT-23-3 surface-mount package. It is optimized for avalanche mode operation with a collector-emitter breakdown voltage of 50V and a collector-base breakdown voltage of 150V. The device supports a continuous collector current of 100mA and a peak pulse current of 50A at a 25ns pulse width. Key electrical parameters include a transition frequency of 150MHz, power dissipation of 330mW, and a collector-emitter saturation voltage of 150mV at 10mA collector current.

Single Bipolar Transistors Feature Summary

Optimized for avalanche mode operation to produce high-current pulses with fast edges
Features low inductance packaging to enhance switching performance
Capable of handling significant peak avalanche currents under pulsed conditions

Single Bipolar Transistors Applications

Laser LED drivers
Fast edge generation circuits
High speed pulse generators

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version (Issue 3 - March 2006) when reviewing technical specifications, as historical documentation may differ from current manufacturing standards. Confirm that the SOT-23-3 package dimensions align with your PCB footprint requirements. Ensure that the absolute maximum ratings, particularly regarding peak pulse current and thermal resistance, are respected within your circuit design constraints.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring precise avalanche mode control or rapid pulse generation capabilities. The low inductance SOT-23-3 package makes it suitable for compact designs where space is limited but fast switching speeds are critical. Consider the 50V collector-emitter breakdown voltage limit when determining operating margins for your specific application environment.

Single Bipolar Transistors Part Context

This component belongs to the FMMT413 series of NPN bipolar transistors designed specifically for avalanche applications. Originally developed by Zetex Semiconductors plc and now distributed by Diodes Incorporated, these devices utilize tight process control to ensure consistent performance in high-speed switching scenarios. The series is distinct from standard signal transistors due to its specialized avalanche characteristics.