SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FMMT918TC is an NPN silicon planar VHF/UHF transistor manufactured by Diodes Incorporated in a surface-mount SOT-23-3 package. It features a collector-emitter voltage of 15V, continuous collector current of 100mA, and power dissipation of 330mW at 25°C. The device exhibits a transition frequency of 600MHz and a common emitter power gain of 15dB at 200MHz. Electrical characteristics include a static forward current transfer ratio (hFE) of 20 at 3mA, collector cut-off current of 0.05μA, and noise figure of 6.0dB at 60MHz. Operating temperature range spans from -55°C to +150°C.
Verify the component authenticity by checking the marking code '3B' on the SOT-23 package against official Diodes Incorporated documentation. Confirm the suffix 'TC' corresponds to the tape and reel packaging format specified in the manufacturer's ordering information. Ensure the datasheet version matches the electrical parameters provided in the technical specifications.
Select this component when designing circuits requiring NPN transistors with specific VHF/UHF capabilities and low noise characteristics. Consider the 15V collector-emitter voltage limit and 100mA continuous current rating for load requirements. Evaluate the thermal management needs given the 330mW power dissipation capability in the SOT-23 package.
The FMMT918 belongs to the family of NPN silicon planar transistors optimized for radio frequency applications. The 'TC' suffix typically indicates the specific packaging configuration, such as tape and reel, intended for automated surface mount assembly processes. This part serves as a discrete solution for high-frequency amplification tasks within consumer and industrial electronics.
Consult official cross-reference lists from Diodes Incorporated or authorized distributors for verified equivalent parts. Ensure any substitute maintains compatible pinout configurations, voltage ratings, and RF performance metrics for direct replacement in existing circuit designs.