ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：3dB ~ 5dB @ 500MHz
- Gain：-
- Power - Max：330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：25mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The FMMTH10TC is an NPN silicon planar RF transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT-23 package. It features a transition frequency (fT) of 650 MHz and a maximum collector-base capacitance of 0.7 pF. The device supports a continuous collector current of 25 mA with a peak pulse current of 50 mA. Key electrical ratings include a collector-emitter breakdown voltage (V(BR)CEO) of 25 V and a collector-base breakdown voltage (V(BR)CBO) of 30 V. Power dissipation is rated at 330 mW at 25°C ambient temperature. The component operates within a junction and storage temperature range of -55°C to +150°C.
Feature Summary
- High transition frequency of 650 MHz for RF applications
- Low noise figure typically under 5 dB at 500 MHz
- Minimal feedback capacitance of 0.7 pF
Applications
- RF amplifier circuits
- Low-noise amplification stages
- High-frequency signal processing
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging configuration. Ensure that the requested variant matches the required reel or cut tape specifications. Confirm RoHS compliance status through official datasheets before procurement. Validate that the component meets all necessary automotive or industrial reliability standards if applicable to the design requirements.
Selection Notes
Select this component for designs requiring high-speed switching and low noise performance in compact form factors. Evaluate thermal management capabilities as power dissipation is limited to 330 mW. Consider the low continuous current rating when designing load paths. Verify that the operating frequency aligns with the 650 MHz transition frequency specification for optimal gain.
Part Context
This part belongs to the FMMTH series of NPN silicon planar transistors designed specifically for radio frequency applications. The TC suffix indicates a specific packaging format provided by Diodes Incorporated. The device utilizes epitaxial planar technology to achieve high-frequency performance while maintaining low noise characteristics suitable for sensitive RF front-end modules.
Replacement Considerations
Consult official substitution guides for compatible RF transistors with similar fT and noise specifications. Verify pinout compatibility and package dimensions before replacing the component. Ensure that replacement devices meet the same voltage and current ratings to maintain circuit integrity.
