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Product Detailed Parameters
- Description：DIODE VAR CAPAC 30V 10PF SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Capacitance @ Vr, F：11pF @ 4V, 1MHz
- Capacitance Ratio：3.3
- Capacitance Ratio Condition：C2/C30
- Voltage - Peak Reverse (Max)：30 V
- Diode Type：Single
- Q @ Vr, F：400 @ 4V, 50MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The FMMV2103TA is a silicon planar variable capacitance diode manufactured by Diodes Incorporated, housed in an SOT-23 package. It features a nominal capacitance of 10.0 pF at 4 V reverse bias and 1 MHz frequency, with a range from 9.0 to 11.0 pF. The device supports a maximum reverse voltage of 30 V and a forward current of 200 mA. Key electrical parameters include a Q factor of 400 minimum at 50 MHz, a turning ratio (C2/C30) between 2.6 and 3.3, and a series inductance of 3.0 nH. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Utilizes silicon planar technology for stable variable capacitance performance.
- Provides high quality factor (Q) suitable for RF tuning applications.
- Offers precise capacitance tolerance and consistent turning ratios across the voltage range.
Applications
- RF tuning circuits
- Voltage-controlled oscillators (VCOs)
- Frequency synthesizers
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm tape and reel packaging details. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status via the official datasheet before integration into regulated assemblies.
Selection Notes
Select this component based on the required nominal capacitance of 10.0 pF and the necessary Q factor of 400 at 50 MHz. Verify that the 30 V reverse voltage rating meets the circuit's peak operating conditions. Consider the SOT-23 package size for space-constrained PCB layouts.
Part Context
This part belongs to the FMMV210x series of silicon planar variable capacitance diodes. The series includes variants with different nominal capacitances, such as FMMV2101 (6.8 pF) and FMMV2109 (33.0 pF), all sharing similar electrical characteristics and package types for standardized RF design.
Replacement Considerations
Direct substitutes within the same series include FMMV2101, FMMV2104, FMMV2105, FMMV2107, FMMV2108, and FMMV2109. Cross-manufacturer replacements require matching capacitance, Q factor, and package dimensions.
