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FMNP2305-Q1-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Formosa Microsemi Co., Ltd.. Its product description is -4.1A -20V P-Channel Enhancement. Review the specifications below when checking this part for your BOM.
The FMNP2305-Q1-H is a P-Channel Enhancement Mode Power MOSFET manufactured by Formosa Microsemi Co., Ltd. It features a maximum drain-source voltage of -20 V and a continuous drain current of -4.1 A. The device utilizes an SOT-23 surface-mount package. Key electrical parameters include a maximum on-state resistance of 45 mΩ at VGS = -4.5 V and ID = -3.5 A, or 70 mΩ at VGS = -2.5 V and ID = -3.0 A. It operates within a junction temperature range of -55°C to +150°C.
Verify the component matches the specific Formosa MS part number FMNP2305-Q1-H. Confirm the package type is SOT-23 and that it meets AEC-Q101 qualification requirements if used in automotive contexts. Ensure documentation confirms lead-free and halogen-free status as specified in the datasheet revision B.
Select this component for low-side switching applications requiring a P-Channel configuration. Consider the -20 V breakdown voltage and -4.1 A continuous current limits when designing power stages. Evaluate thermal performance based on the 150 °C/W junction-to-ambient thermal resistance for proper heat dissipation planning.
This component belongs to the Formosa MS P-Channel SMD Power MOSFET series. It is designed for surface-mount technology integration into compact electronic systems. The device serves as a solid-state switch for managing power distribution in portable electronics and power conversion modules.
No public confirmed substitute part numbers are available in the provided documentation.
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