FET, MOSFET Arrays FMP76-01T product image

FMP76-01T

$7.96
  • Description:MOSFET N/P-CH 100V 54A I4-PAC
  • Series:-

SKU:5852f9b56b4e Category: Brand:

  
  • Quantity
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FMP76-01T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N/P-CH 100V 54A I4-PAC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FMP76-01T

  • Description:MOSFET N/P-CH 100V 54A I4-PAC
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel, Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:54A (Tc), 62A (Tc)
  • Rds On (Max) @ Id, Vgs:24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA, 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:197nC @ 10V, 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1370pF @ 25V, 5080pF @ 25V
  • Power - Max:89W, 132W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:ISOPLUSi5-PAK™
  • Supplier Device Package:ISOPLUS i4-PAC™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FMP76-01T

FMP76-01T

FET, MOSFET Arrays Overview

The FMP76-01T is a Trench P and N-channel Power MOSFET module featuring a common drain topology. It utilizes a silicon chip on a Direct-Copper Bond (DCB) substrate for enhanced thermal performance. The device is housed in an ISOPLUS i4-Pak package, which provides an isolated mounting surface and UL recognition. Key electrical parameters include a maximum drain-source voltage of -100V, a continuous drain current of -54A at 25°C case temperature, and a maximum on-resistance of 0.024 Ohms at 25°C junction temperature.

FET, MOSFET Arrays Feature Summary

  • Trench P and N-channel Power MOSFET common drain topology
  • Silicon chip mounted on Direct-Copper Bond (DCB) substrate
  • ISOPLUS i4-Pak package with isolated mounting surface
  • UL recognized package configuration

FET, MOSFET Arrays Applications

  • Phase leg modules
  • H-Bridge configurations
  • Power interface applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix '01' against official IXYS documentation to confirm it denotes the -100V/-54A variant rather than other series options. Ensure the DCB substrate construction aligns with thermal management requirements. Confirm that the ISOPLUS i4-Pak footprint matches the target PCB design constraints. Cross-reference the UL recognition status if regulatory compliance is mandatory for the end application.

FET, MOSFET Arrays Selection Notes

Select this component when a complementary P/N channel pair in a single phase leg is required. The common drain topology simplifies circuit layout for half-bridge or H-bridge structures. The DCB substrate offers superior thermal conductivity compared to standard ceramic substrates. Consider the -100V rating and -54A current capacity relative to the system's peak load demands and operating temperature range.

FET, MOSFET Arrays Part Context

This part belongs to the IXYS FMP76 series of power MOSFET modules. These modules are designed for high-power switching applications where compact size and efficient heat dissipation are critical. The series typically includes various voltage and current ratings within the same package family to facilitate modular design across different product lines.

FET, MOSFET Arrays Replacement Considerations

The FMP76-010T is a related model within the same series. Verify if the specific electrical characteristics of the -010T variant meet the system requirements before substitution.

FMP76-01TFMP76-01T
$7.96
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