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The FP100R06KE3BOSA1 is a Trench/Fieldstop IGBT3 module with an Emitter Controlled diode in the EconoPIM™3 package. It features a collector-emitter voltage of 600 V and a continuous DC collector current of 100 A at TC=80°C. The maximum power dissipation is 335 W at TC=25°C, with a junction-to-case thermal resistance of 0.45 K/W per IGBT. The gate-emitter peak voltage is ±20 V, and the operating temperature range spans from -40°C to +150°C.
Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing lot or revision details. Ensure that the component matches the required RoHS compliance status and packaging format before finalizing procurement orders.
Select this module for designs requiring a 600 V rating and up to 100 A continuous current. Consider the 0.45 K/W thermal resistance for heatsink sizing. Verify that the drive circuit can handle the specified gate charge and internal gate resistor values for optimal switching performance.
This part belongs to the Infineon EconoPIM™3 series, designed for compact power conversion systems. It utilizes silicon technology and integrates both IGBT and diode chips within a single flange-mounted module structure for simplified mechanical assembly.
FP100R06KE3
The maximum junction temperature for the rectifier section is 150°C.
Yes, it includes an integrated NTC thermistor with a rated resistance of 5.00 kΩ at 25°C.
The module stray inductance (LsCE) is specified as 60 nH.