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The FP100R07N3E4B16BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 - E4 series. It features a 650 V collector-emitter maximum voltage and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.95 V and a power dissipation rating of 335 W. Operating within a temperature range of -40°C to +150°C, it utilizes screw mount installation. The component is packaged in a tray with a factory pack quantity of 10 units.
Verify the specific ordering suffix B16 against official datasheets to confirm package and pinout compatibility. Confirm RoHS compliance status through manufacturer documentation. Check for end-of-life notifications or discontinuation notices prior to finalizing procurement plans to ensure long-term supply chain stability.
Select this module for applications requiring 650V isolation and 100A continuous current handling. Ensure the cooling system supports the 335W power dissipation rating. Verify that the gate drive circuitry aligns with the specified electrical characteristics. Consider the screw mount requirement for mechanical integration into the target assembly design.
This component is part of Infineon's EconoPIM family, designed for compact power conversion solutions. It represents the E4 generation of TrenchSTOP technology, offering improved efficiency compared to previous iterations. The module integrates anti-parallel diodes for complete half-bridge functionality within a single package.
Direct substitutes include FS100R07N3E4 and FP100R07N3E4. Verify pin compatibility and thermal resistance values before substitution. Consult official replacement guides for any functional differences between EconoPIM and standard EconoPACK packages.