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The FP100R12KT4PB11BPSA1 is an Infineon EconoPIM3 IGBT module utilizing Trench/Fieldstop IGBT4 and EmCon4 diode technology. It features a three-phase inverter configuration with a 1200 V collector-emitter voltage rating (VCES). The nominal continuous DC collector current (ICDC) is 100 A at a case temperature of 95 °C, with a peak repetitive current (ICRM) of 200 A. The typical saturated collector-emitter voltage (VCEsat) is 1.75 V at 25 °C. The module includes an integrated NTC thermistor for thermal monitoring and operates within a junction temperature range of -40 °C to +150 °C.
Verify the specific ordering suffix PB11BPSA1 against official documentation to confirm pin configuration and terminal type. Ensure compliance with industrial standards such as IEC 60747 and 60068 for intended use cases. Confirm mechanical mounting requirements and torque specifications prior to installation.
Select this module for applications requiring robust thermal performance and high power density. The integrated NTC facilitates precise temperature management. Evaluate thermal resistance values and short-circuit withstand capabilities against system fault conditions. Ensure gate drive parameters align with the specified internal gate resistance and charge requirements.
This component belongs to the Infineon EconoPIM3 series, designed for compact and efficient power conversion. It combines IGBT and diode chips in a standardized housing. The Trenchstop IGBT4 technology provides a balance of low conduction and switching losses suitable for industrial frequency ranges.
Public confirmed substitute part numbers are not available in the provided source material.