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The FP100R12N3T4B80BPSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, designed for three-phase power conversion applications. It integrates a three-phase rectifier bridge and a three-phase inverter within a single package. The module features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.75 V and a power dissipation rating of 515 W. The device operates within a junction temperature range of -40°C to +150°C and utilizes silicon IGBT technology.
Verify the specific suffix B80 against official datasheets to confirm pinout compatibility and thermal interface requirements. Ensure that the ordering part number matches the exact revision intended for your design, as suffix variations may indicate differences in packaging or testing standards without altering core electrical functions.
Select this component when a combined rectifier and inverter solution is required to save board space and simplify assembly. Consider the 1200 V rating for medium-voltage AC applications and verify that the 100 A current capacity aligns with the peak load demands of the target inverter circuit while maintaining adequate thermal headroom.
This part belongs to Infineon's PIM series, which consolidates multiple power switches to reduce interconnect inductance and improve reliability. It serves as an alternative to discrete six-pack configurations, offering a pre-validated topology for standard three-phase inverter designs used in industrial automation and energy conversion systems.
Direct replacements must match the 1200 V/100 A rating and PIM form factor. Verify pin-to-pin compatibility with existing footprints. Consult official substitution guides for updated generations like N3T7 variants, ensuring thermal resistance and gate drive characteristics remain within acceptable limits for the original design.