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The FP10R06W1E3_B11 is a Power Integrated Module (PIM) from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology and Emitter Controlled 3 diodes. It features PressFIT connection technology and an integrated NTC thermistor. The module includes three inverter IGBTs with a collector-emitter voltage of 600 V, a continuous DC collector current of 10 A at 80°C case temperature, and a repetitive peak current of 20 A. It also contains three inverter diodes rated for 10 A continuous forward current and one rectifier diode rated for 1600 V reverse voltage and 30 A RMS current. Total power dissipation is 68 W at 25°C case temperature.
Verify the specific ordering suffix against official documentation to confirm mechanical interface variations or internal component configurations. Ensure compatibility with existing PCB layouts and cooling systems before procurement. Confirm RoHS compliance status through the manufacturer's latest release notes. Validate that the selected variant matches the required insulation class and terminal configuration for the target application.
Select this module for applications requiring high controllability and short-circuit ruggedness. Consider the positive temperature coefficient of VCEsat for easy parallel operation. Evaluate the thermal resistance values to ensure adequate heatsinking. Verify gate drive requirements match the specified threshold and peak voltage limits. Assess stray inductance impact on switching performance.
This component belongs to the EasyPIM series, designed for compact power conversion solutions. It combines multiple semiconductor chips into a single insulated module. The series targets industrial motor drives and consumer electronics like air conditioners. It replaces discrete component assemblies by reducing parasitic inductance and simplifying assembly processes.
Consult official replacement lists for direct equivalents. Verify pinout compatibility and thermal characteristics when substituting. Check if updated generations offer improved electrical parameters or packaging options.
The maximum short-circuit time is 8 µs at a junction temperature of 25°C and 6 µs at 150°C.
The rated resistance at 25°C is 5 kΩ with a B-value of 3375 K (B25/50).
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.