SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP10R12W1T4P_B11 is an EasyPIM module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 10 A at TH = 100°C, and a repetitive peak collector current of 20 A. The typical VCEsat is 1.85 V at Tvj = 25°C. Thermal resistance from junction to heatsink is 1.89 K/W per IGBT and 2.48 K/W per diode. The module includes pre-applied thermal interface material and integrated mounting clamps.
Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing revisions or regional compliance variations. Ensure that the required PressFIT tooling is compatible with the module's connector specifications before procurement. Confirm availability of pre-applied thermal interface material handling guidelines during storage and transport.
Select this module for applications requiring low switching losses and positive temperature coefficient characteristics. Consider the 1200 V rating and 10 A nominal current for auxiliary inverter and motor drive designs. Evaluate the compact design and Al2O3 substrate for efficient thermal management in space-constrained environments.
This component belongs to the EasyPIM family from Infineon Technologies, designed for three-phase inverter applications. It combines power semiconductors with control electronics in a single package. The module utilizes advanced Trench/Fieldstop IGBT4 technology to achieve high efficiency and reliability in industrial power conversion systems.
Public confirmed substitute part numbers are not available in the provided datasheet. Consult official Infineon resources for cross-referencing alternatives based on specific electrical and mechanical requirements.