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The FP150R12KT4PB11BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 series. It utilizes the EconoPIM 3 package and features a 3-phase inverter configuration. Key electrical parameters include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 150 A at 25°C. The typical collector-emitter saturation voltage is 1.75 V, with a gate-emitter leakage current of 100 nA. The device operates within a temperature range of -40°C to +150°C and supports through-hole installation.
Verify the exact part number against official Infineon documentation to ensure compatibility with specific design requirements. Confirm that the ordering suffix corresponds to the intended configuration and packaging specifications before procurement. Cross-reference datasheets for thermal and electrical limits.
Select this component for applications requiring a 1.2 kV rating and 150 A current capacity in a three-phase topology. Ensure the system design accommodates the EconoPIM 3 form factor and through-hole mounting style. Evaluate thermal management solutions suitable for the specified operating temperature range.
This module is part of the Infineon Trenchstop IGBT4 family, which offers improved efficiency compared to previous generations. The EconoPIM 3 package provides a standardized footprint for power electronics designers. It serves as a high-power solution for industrial and commercial power conversion needs.
Check for direct substitutes within the same Trenchstop IGBT4 series or compatible EconoPIM packages. Verify pinout compatibility and electrical parameter equivalence when considering alternative part numbers.