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The FP150R12N3T7B80BPSA1 is a silicon IGBT module manufactured by Infineon Technologies, classified as a Power Integrated Module (PIM) with a 3-phase input rectifier configuration. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 150 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.55 V and a gate-emitter leakage current of 100 nA. Rated for operation between -40°C and +175°C, it utilizes screw mount installation within a tray package. The module supports a maximum gate-emitter voltage of 20 V.
Verify the specific suffix B80 against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with existing thermal interface materials and mounting hardware. Confirm RoHS compliance status through the manufacturer's latest product declaration before integration into regulated environments.
Select this component when a dedicated three-phase rectifier stage is required alongside other PIM variants in the same family. Evaluate the 1.2 kV rating against peak line voltages and transient spikes. Consider the 150 A continuous current limit relative to the expected load profile and cooling capabilities of the heat sink assembly.
This module belongs to the FP150R12N3 series of IGBT modules from Infineon. It shares the core electrical characteristics of the series but differs in packaging and internal configuration specifics denoted by the suffix. It is part of a broader portfolio designed for medium-power industrial applications requiring reliable switching and rectification.
Consult Infineon's official cross-reference guides for direct replacements. Verify pinout compatibility and thermal resistance values if substituting with similar 1.2 kV, 150 A PIM modules from other manufacturers.