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The FP200R12N3T7B80BPSA1 is a PIM IGBT module from Infineon Technologies, featuring a 3-phase input rectifier configuration. It utilizes IGBT7 technology with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 200 A at 25°C. The saturation voltage is 1.55 V, while the gate-emitter leakage current is limited to 100 nA. Operating within a temperature range of -40°C to +175°C, it employs silicon construction and through-hole installation in a tray package.
Verify the specific suffix B80 against official datasheets to confirm exact manufacturing lot or packaging variations. Ensure compatibility with standard EconoPIM mounting requirements. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm thermal interface material specifications before assembly.
Select this module for applications requiring high current handling up to 200 A with low conduction losses. Consider the 1.2 kV blocking capability for medium-voltage AC drive systems. Evaluate thermal management needs given the 175°C junction temperature limit. Compare against similar FP series variants if different current ratings are required.
This component belongs to Infineon's EconoPIM family, designed for efficient power electronics. It represents an evolution in IGBT modules, combining rectifier functionality with advanced semiconductor materials. The product line targets industrial sectors needing reliable, high-density power solutions.
Consult official substitution guides for compatible alternatives. Verify pinout and thermal characteristics match before swapping. Check if updated generations offer improved efficiency or availability.