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The FP20R06YE3B4BOMA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT3 - E3 series. It features an array 7 configuration housed in an Easy1B package with screw mount installation style. The device supports a collector-emitter maximum voltage (VCEO) of 600 V and provides a continuous collector current of 27 A at 25 °C. The gate-emitter maximum voltage is rated at 20 V. Operating temperatures range from -40 °C to +150 °C. The component weighs approximately 24 g and utilizes standard Si technology for industrial power switching applications.
Verify the specific ordering suffix B4BOMA1 against official Infineon documentation to confirm exact manufacturing lot details or regional compliance variations. Ensure compatibility with existing PCB footprints and thermal interface materials before integration. Cross-reference datasheet revision dates to guarantee alignment with current design specifications.
Select this module for applications requiring 600 V blocking capability and moderate current handling up to 27 A. Consider the Easy1B package dimensions for mechanical fitment and heat sink compatibility. Evaluate thermal resistance parameters under actual operating conditions to ensure junction temperature limits are not exceeded during peak load scenarios.
This component is part of Infineon's broader portfolio of discrete and module-based power semiconductors. It serves as a key element in medium-power conversion circuits where reliability and efficiency are critical. The Trenchstop generation represents a mature technology platform widely adopted in industrial and consumer electronics sectors.
Direct substitutes may include other 600 V, 27 A IGBT modules in similar Easy1B packages from Infineon or compatible manufacturers. Verify pinout compatibility and electrical characteristics such as Vce(sat) and switching times before substitution.