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Product Detailed Parameters
- Description：IGBT MOD 1200V 40A 155W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 25A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：155 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：1.8 nF @ 25 V
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Overview
The FP25R12KE3BOSA1 is an IGBT module from Infineon Technologies, utilizing the EconoPIM™2 package. It integrates Trench/Feldstopp IGBT3 technology with emitter-controlled diodes for inverter and brake-chopper applications, alongside a rectifier diode rated at 1600 V. Key electrical parameters include a collector-emitter voltage of 1200 V, continuous DC collector current of 25 A (40 A at 25°C), and total power dissipation of 155 W. The module features a 5 kΩ NTC thermistor, operates within a junction temperature range of -40°C to 150°C, and provides isolation test voltage of 2.5 kV RMS.
Feature Summary
- Integrates Trench/Feldstopp IGBT3 technology with emitter-controlled diodes for optimized switching performance.
- Includes an integrated NTC thermistor for precise thermal monitoring.
- Features a copper baseplate with basic insulation for enhanced thermal management and safety.
Applications
- Three-phase inverter circuits
- Brake chopper configurations
- Rectifier stages
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and relevant industrial standards before integration into final assemblies.
Selection Notes
Evaluate thermal resistance values against system heat sink capabilities. Verify gate drive requirements, specifically noting recommended minimum external resistances for operation with zero-volt high-side drivers. Assess short-circuit withstand capability relative to protection circuit response times.
Part Context
This component belongs to the FPXR12K4G series, designed for medium-power industrial applications. It combines robust silicon technology with compact packaging to facilitate efficient power conversion in demanding environments requiring reliable switching characteristics.
Replacement Considerations
Direct substitutes within the same family include FP25R12KE3. Cross-family replacements require careful evaluation of pin compatibility, thermal resistance, and electrical ratings to ensure functional equivalence without redesigning the host circuitry.
FAQ
What is the maximum repetitive peak reverse voltage for the rectifier diode?
The rectifier diode supports a repetitive peak reverse voltage of 1600 V.
Does this module include an integrated NTC thermistor?
Yes, the module includes an integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
What is the recommended minimum gate resistance for operation with Vge=0V/+15V?
For operation with Vge=0V/+15V, a minimum Rgon of 36 ohms and Rgoff of 36 ohms are recommended.
