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The FP25R12KT3BOSA1 is a single IGBT module manufactured by Infineon Technologies, belonging to the Trenchstop IGBT3 series. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 25 A at 25°C. The device has a maximum power dissipation of 160 W and operates within a junction temperature range of -40°C to +150°C. The saturation voltage is specified at 1.85 V under standard test conditions. Packaged in an EconoPACK housing, it is designed for screw mounting applications.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and terminal configuration. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into final assemblies.
Select this component for circuits requiring 1200 V blocking capability with moderate current handling. Evaluate thermal resistance requirements against the 160 W dissipation limit. Confirm that gate drive voltages align with the standard operating parameters defined in the technical datasheet.
This part belongs to the FP25R12KT3 product family, which utilizes Trenchstop IGBT3 technology. The series offers a balance between conduction losses and switching speed, targeting cost-sensitive industrial power conversion applications where reliability is critical.
Consult official cross-reference lists for verified substitutes. Direct replacements must match the 1200 V rating, 25 A current capacity, and compatible pinout configuration.