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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP25R12KT4B16BOSA1 is a silicon IGBT module from Infineon Technologies, featuring Trenchstop technology and configured for three-phase inverter applications. It has a maximum collector-emitter voltage of 1200 V and a continuous collector current of 25 A at 25 °C. The saturation voltage is 1.85 V, with a power dissipation of 160 W. Operating temperature ranges from -40 °C to +150 °C.
Verify the specific suffix B16 against official documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with required gate drive voltages and thermal management solutions. Cross-reference datasheet parameters for saturation voltage and power dissipation limits before integration.
Select this component for applications requiring a 1200 V rating and 25 A current capacity. Consider the 160 W power dissipation and operating temperature range when designing heat sinks. Verify that the EconoPIM package fits the mechanical constraints of the target assembly.
This part belongs to the Trenchstop IGBT4 series by Infineon Technologies. It utilizes silicon technology and is housed in a module package suitable for screw or press-fit mounting. The product line focuses on efficient power conversion for industrial and consumer electronics.
Public confirmed substitute part numbers are not available in the provided source material.