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The FP25R12U1T4BPSA1 is a SmartPIM1 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT assembly. It features a collector-emitter voltage (VCES) of 1200 V, nominal continuous collector current (IC nom) of 25 A, and repetitive peak collector current (ICRM) of 50 A. The typical collector-emitter saturation voltage (VCEsat) is 1.85 V at Tvj = 25°C. Total power dissipation (Ptot) reaches 190 W at TC = 25°C. Operating junction temperature ranges from -40°C to +150°C. The module includes an NTC thermistor with a rated resistance (R25) of 5.0 kΩ.
Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with PressFIT mounting requirements and validate that the SmartPIM1 form factor meets the mechanical constraints of the target application design.
Select this component when a compact three-phase rectifier and inverter solution is required. The 1200 V rating supports standard industrial bus voltages. Confirm that the 25 A nominal current aligns with the load profile and that the operating temperature range up to 150°C fits the thermal management strategy.
This part belongs to the SmartPIM1 family, which combines rectifier and inverter stages in a single package. It utilizes Infineon's IGBT4 generation technology. The module integrates both switching and diode components to simplify circuit topology and reduce system size compared to discrete solutions.
Public confirmed substitute part numbers are not available in the provided source material.