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The FP25R12W1T7PBPSA1 is an EasyPIM module integrating TRENCHSTOP IGBT7 technology with emitter-controlled diodes. It features a 1200 V collector-emitter voltage and a nominal continuous DC collector current of 25 A, supporting repetitive peak currents up to 50 A. The module includes an inverter bridge, a brake-chopper circuit, and a rectifier stage. An integrated NTC thermistor provides thermal monitoring. Electrical insulation is rated at 2.5 kV AC for one minute. The device utilizes solder contact technology on an Al2O3 substrate, ensuring low thermal resistance and high power density within a compact design suitable for industrial environments.
Verify the specific ordering suffix PBPSA1 against official Infineon documentation to confirm exact packaging and marking specifications. Ensure compatibility with recommended gate drivers listed in the official GDFinder tool. Confirm that the application environment meets the industrial qualification standards defined in IEC 60747, 60749, and 60068 prior to integration.
Select this module for applications requiring a complete three-phase inverter solution with integrated braking and rectification. The 1200 V rating supports standard DC bus voltages. Consider the 25 A continuous current limit and the ability to handle overload conditions up to 175°C junction temperature. Verify that the external gate resistor values align with the specified switching characteristics for optimal performance.
This component belongs to the Infineon EasyPIM family, designed as a highly integrated power module. The FP25R12W1T7 variant specifically combines IGBT7 switches with emitter-controlled diodes to reduce switching losses. The PBPSA1 suffix denotes the specific commercial packaging and labeling configuration provided by Infineon Technologies for distribution.
Consult the official Infineon product selection guide or cross-reference tools for verified substitute part numbers. Do not assume functional equivalence with other EasyPIM variants without verifying pinout, electrical ratings, and thermal characteristics against the datasheet.
The maximum operating junction temperature (Tvj op) for the IGBTs is 175°C. Operation above 150°C is permitted under overload conditions as detailed in application note AN 2018-14.
No, the internal gate resistor (RGint) is specified as 0.0 Ω. External gate resistors must be used to control switching speeds and minimize voltage spikes.
The rated resistance (R25) of the NTC thermistor at 25°C is typically 5 kΩ, with a B-value (B25/50) of 3375 K.