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The FP35R12KT4B15BOSA1 is an Insulated Gate Bipolar Transistor module from Infineon Technologies, belonging to the EconoPIM2 series. It features Trench Fieldstop IGBT4 technology and EmCon4 diodes in a complex configuration. The device supports a collector-emitter breakdown voltage of 1200 V and a nominal collector current of 35 A, with a maximum continuous collector current of 130 A. It operates within a junction temperature range up to 175 °C and dissipates up to 210 W. The module utilizes a flange mount package with 24 terminals.
Verify the exact suffix against official Infineon documentation, as B15 variants may differ electrically or mechanically from similar B11 or B16 codes. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure thermal interface material compatibility with the flange mount surface for optimal heat dissipation during operation.
Select this module for applications requiring high voltage isolation and moderate current handling. Compare saturation voltage characteristics against alternative IGBT families to ensure compatibility with existing gate driver specifications. Verify that the 1200 V rating provides sufficient margin for the specific DC bus voltage of the target power circuit.
This component is part of the broader FP35R12 product family, which includes various packaging and terminal configurations. It shares core semiconductor technologies with other EconoPIM2 modules but differs in specific pinout arrangements and mechanical mounting details defined by its unique ordering code.
Direct substitutes include FP35R12KT4_B11 and FP35R12KT4_B16. Verify pin compatibility and thermal resistance values before swapping, as different suffixes may indicate variations in internal wiring or terminal plating that affect mechanical integration.