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The FP35R12KT4BPSA1 is a three-phase input rectifier IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 and EmCon4 diode technology. It features a collector-emitter voltage of 1200 V, continuous DC collector current of 35 A at 100°C case temperature, and total power dissipation of 210 W. The module operates within a junction temperature range of -40°C to 150°C, with a maximum rated junction temperature of 175°C for the inverter section. Key electrical parameters include a typical saturation voltage of 1.85 V and forward voltage of 1.70 V.
Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and relevant industrial safety standards before integration into final assemblies.
Select this module based on its 1200 V blocking capability and 35 A continuous current rating suitable for medium-power applications. Evaluate thermal resistance values to ensure adequate heatsinking for the specified power dissipation. Consider the operating temperature range and short-circuit withstand capabilities for system robustness.
This component belongs to the FPXR12K4G series of IGBT modules. It represents a consolidated solution for three-phase rectification, combining multiple semiconductor chips into a single insulated package. The design focuses on reducing parasitic inductance and improving thermal management compared to discrete components.
Consult official replacement lists for compatible modules with similar voltage and current ratings. Verify pin compatibility and thermal characteristics when substituting. Ensure any alternative device meets the same insulation and environmental requirements.