FP35R12N2T7B11BPSA1

Overview

The FP35R12N2T7B11BPSA1 is an EconoPIM™2 power module utilizing TRENCHSTOP™ IGBT7 technology. It features a 1200 V collector-emitter voltage and a nominal continuous DC collector current of 35 A at 105 °C case temperature, with a repetitive peak current capability of 70 A. The inverter diode supports a forward current of 35 A and a reverse voltage of 1200 V. The rectifier section provides a maximum RMS current of 100 A at 80 °C with a 1600 V reverse voltage rating. An integrated NTC thermistor offers a rated resistance of 5 kΩ at 25 °C for thermal monitoring.

Feature Summary

• Integrates TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diodes to achieve low saturation voltage and reduced switching losses.
• Employs PressFIT contact technology for solderless mounting, enhancing assembly efficiency and connection reliability.
• Includes an integrated NTC temperature sensor for precise junction temperature monitoring during operation.
• Constructed with a copper base plate and Al2O3 substrate to provide high thermal cycling capability and low thermal resistance.

Applications

• Auxiliary inverters
• Motor drives
• Servo drives

Procurement Notes

Verify the specific ordering suffix B11 against official Infineon documentation to confirm terminal configuration and labeling standards. Ensure that the procurement channel provides valid traceability documents. Confirm compliance with industrial qualification requirements specified in IEC 60747, 60749, and 60068 before finalizing orders.

Selection Notes

Select this module for applications requiring robust short-circuit withstand capabilities and high overload operation up to 175 °C. The design supports efficient thermal management through its copper base plate structure. Verify that the system layout accommodates the specific mechanical dimensions and mounting torque requirements defined in the application notes.

Part Context

This component belongs to the EconoPIM™2 series from Infineon Technologies. It represents a Power Integrated Module (PIM) topology designed for three-phase input rectification and inversion. The product line utilizes advanced silicon technology to optimize power density and thermal performance for industrial power electronics systems.

Replacement Considerations

Consult official Infineon replacement guides for direct equivalents. Cross-referencing requires matching voltage ratings, current capacities, and package dimensions. Verify compatibility with existing gate drive circuits and thermal interface materials when substituting components.