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The FP35R12W2T4PBPSA1 is an EasyPIM™ module integrating Trench/Fieldstop IGBT4 and Emitter Controlled diodes with a pre-applied thermal interface material. It features a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 35 A at TH = 80°C, and a repetitive peak collector current of 70 A. The typical VCEsat is 1.85 V at Tvj = 25°C. The unit includes an integrated NTC thermistor rated at 5 kΩ (R25) for temperature monitoring.
Verify the exact ordering suffix against official Infineon documentation to confirm specific packaging or variant details. Ensure compatibility with the required gate drive voltages and thermal management solutions before finalizing procurement specifications.
Select this component for applications requiring high switching frequency and low conduction losses. Evaluate the thermal resistance values under actual operating conditions to ensure junction temperatures remain within the specified maximum limits during continuous operation.
This part belongs to the EasyPIM™ family, which combines power semiconductors in a compact package. It utilizes Infineon's fourth-generation trench gate technology to optimize switching performance while maintaining ruggedness for industrial environments.
Consult official cross-reference lists for compatible modules. Verify that any substitute matches the pinout, voltage ratings, and thermal characteristics to ensure direct replacement without circuit redesign.
The maximum repetitive peak collector current (ICRM) is 70 A for a pulse duration of 1 ms.
Yes, it integrates a negative temperature coefficient (NTC) thermistor with a rated resistance of 5 kΩ at 25°C.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.