SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP40R12KE3BOSA1 is an EconoPIM™2 IGBT module integrating Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodes. It features a 1200 V collector-emitter voltage (VCES) with continuous DC collector currents of 40 A at TC=80°C and 55 A at TC=25°C. The inverter IGBT exhibits a saturation voltage (VCEsat) ranging from 1.80 V to 2.30 V, while the brake-chopper IGBT operates at 15 A to 25 A. Total power dissipation reaches 210 W for the inverter section and 105 W for the brake-chopper. The module includes a 5 kΩ NTC thermistor, supports screw mounting via M5 screws, and weighs 180 g.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm packaging and reel specifications. Ensure compliance with RoHS directives and check for any regional supply restrictions or alternative package variants before finalizing procurement orders.
Select this component for applications requiring combined inverter and braking chopper functionality within a single compact housing. Evaluate thermal resistance values against your heatsink design to ensure the maximum junction temperature remains within the specified operational range during peak load conditions.
This part belongs to the EconoPIM™2 family, designed for cost-effective and space-saving power electronics solutions. It utilizes Infineon's third-generation IGBT technology, offering improved efficiency compared to previous generations while maintaining robust mechanical and electrical characteristics for industrial environments.
Consult official replacement guides for direct equivalents such as the FP40R12KE3 without the BOSA1 suffix if packaging differences are acceptable. Verify pinout compatibility and thermal parameters when considering cross-references from other manufacturers.
The repetitive peak short-circuit current (ISC) is rated at 160 A for the inverter IGBT under specified test conditions.
Yes, the module integrates a rectifier diode with a repetitive peak reverse voltage of 1600 V and a maximum RMS forward current of 50 A per chip.
The typical gate charge (QG) for the inverter IGBT is 0.33 µC.