SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP40R12KT3BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ technology. It features an inverter IGBT rated at 1200 V and 40 A continuous DC collector current (TC=80°C), with a repetitive peak current of 80 A. The integrated anti-parallel diode supports 1200 V and 40 A forward current. Key electrical parameters include a typical VCE(sat) of 1.80 V and VF of 1.75 V at 25°C. The module incorporates an NTC thermistor with a nominal resistance of 5 kΩ at 25°C for thermal monitoring. Total power dissipation is 210 W at TC=25°C, with a junction-to-case thermal resistance of 0.60 K/W for the IGBT and 0.95 K/W for the diode.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the ordering suffix BOSA1 matches the required RoHS compliance and packaging specifications. Ensure the procurement documentation includes the valid datasheet revision to guarantee alignment with the latest technical characteristics and mounting guidelines.
Select this module for applications requiring robust 1200 V blocking capability and moderate current handling up to 40 A. Evaluate the thermal management requirements against the specified junction-to-case thermal resistance values. Ensure the gate drive circuitry provides appropriate voltage levels and resistances to optimize switching losses within the safe operating area limits defined in the datasheet.
This component belongs to the EconoPACK™ family of modules, designed for compact integration in power electronics. It represents a specific configuration within Infineon's broader portfolio of trench-stop insulated-gate bipolar transistors, balancing performance and reliability for industrial power conversion applications.
Consult official replacement guides for compatible alternatives such as the FP40R12KT3G or newer generations like the FP40R12KT4. Verify pinout compatibility and thermal interface dimensions before substitution to ensure seamless integration into existing designs.
The module can withstand a short-circuit condition for a maximum duration of 10 µs at a junction temperature of 125°C and a collector-emitter voltage of 900 V.
The module supports an isolation test voltage of 2.5 kV RMS at 50 Hz for one minute between terminals and heatsink.
The integrated NTC thermistor has a nominal resistance of 5 kΩ at 25°C and a B-value of 3375 K, allowing for accurate monitoring of the module's case temperature.