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The FP50R06W2E3BOMA1 is a three-phase inverter IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology. It features integrated emitter-controlled diodes and an NTC thermistor within the EasyPIM package. Key electrical parameters include a collector-emitter voltage (VCES) of 600 V, a continuous DC collector current (IC nom) of 50 A at TC=75°C, and a repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCEsat) is 1.45 V at Tvj=25°C. Total power dissipation is rated at 175 W. The module operates within a junction temperature range of -40°C to +150°C.
Verify component authenticity by cross-referencing the module label code against the datasheet specifications. Confirm that the serial number, material number, and production date codes match the expected manufacturing batch. Ensure the product meets RoHS compliance standards as indicated in official documentation before finalizing acquisition.
Select this module for applications requiring a compact three-phase inverter solution with integrated rectifier and brake chopper functions. Consider the 600 V rating and 50 A continuous current capability when designing for auxiliary inverters or motor drives. Evaluate the thermal resistance values and required mounting force (40-80 N per clamp) during system integration.
This component belongs to the EasyPIM series, which combines power semiconductors into a single compact module. The FP50R06W2E3 variant specifically utilizes IGBT3 technology to optimize switching performance and conduction losses. It serves as a complete power stage solution, integrating inverter, rectifier, and brake chopper sections.
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The rectifier section has a maximum repetitive peak reverse voltage (VRRM) of 1600 V.
The rated resistance (R25) of the NTC thermistor at 25°C is 5.00 kΩ.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.