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Product Detailed Parameters
- Description：IGBT MODULE 650V 70A
- Series：EconoPIM™ 2
- Mfr：Infineon Technologies
- Package：Bulk,Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：3.1 nF @ 25 V
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Overview
The FP50R07N2E4_B11 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes with PressFIT technology. It features a collector-emitter voltage (VCES) of 650 V, a nominal continuous DC collector current (IC nom) of 50 A at TC=80°C, and a repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCEsat) is 1.55 V at Tvj=25°C. The integrated NTC thermistor has a rated resistance (R25) of 5.0 kΩ. Maximum operating junction temperature is 150°C, with storage temperatures ranging from -40°C to 125°C.
Feature Summary
- High short-circuit capability for robust operation under fault conditions
- Positive temperature coefficient for VCEsat enabling safe parallel operation
- Integrated NTC temperature sensor for reliable thermal monitoring
- PressFIT contact technology ensuring secure mechanical and electrical connections
Applications
- Motor drives
- Three-phase inverter systems
- Brake chopper circuits
Procurement Notes
Verify the specific ordering suffix B11 against official Infineon documentation to confirm exact configuration details. Ensure that the required datasheet version matches the manufacturing date code on the module label. Confirm compliance with relevant industrial standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high blocking voltage and moderate current levels. Evaluate thermal resistance values based on the specific heatsink interface material used. Consider the positive temperature coefficient of VCEsat when designing parallel switching configurations for higher current demands.
Part Context
This module belongs to the EconoPIM™2 series, designed for compact power conversion solutions. It utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 3 diodes. The package integrates both inverter and rectifier functions into a single unit, optimizing space utilization in industrial power electronics designs.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Verify pin compatibility and thermal characteristics before replacing existing modules in established designs.
