FP50R07N2E4BOSA1

FP50R07N2E4BOSA1

  • Description:IGBT MODULE 650V 70A
  • Series:EconoPIM™ 2

SKU:d5b7604f25b9 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MODULE 650V 70A
  • Series:EconoPIM™ 2
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):70 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:3.1 nF @ 25 V

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FP50R07N2E4BOSA1

Overview

The FP50R07N2E4BOSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes with an NTC sensor. It features a collector-emitter voltage (VCES) of 650 V, a nominal continuous DC collector current (IC nom) of 50 A at TC=80°C, and a repetitive peak collector current (ICRM) of 100 A. The saturation voltage (VCEsat) ranges from 1.55 V to 1.95 V depending on junction temperature. Switching losses include turn-on energy (Eon) of 0.33 mJ to 0.475 mJ and turn-off energy (Eoff) of 1.80 mJ to 2.40 mJ at Tvj=150°C. Thermal resistance from junction to case is 0.800 K/W per IGBT.

Feature Summary

  • High short-circuit capability for robust operation under fault conditions
  • Positive temperature coefficient for the collector-emitter saturation voltage
  • Integrated NTC temperature sensor for reliable thermal monitoring
  • Isolated copper base plate utilizing solder contact technology

Applications

  • Motor drives
  • Industrial power conversion systems
  • Inverter circuits requiring high blocking voltage

Procurement Notes

Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm packaging and reel specifications. Ensure that the component matches the required RoHS compliance standards and material content data sheets before finalizing procurement orders.

Selection Notes

Select this module for applications requiring a 650 V rating and up to 50 A continuous current. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Verify that the operating junction temperature range of -40°C to 150°C aligns with the system's thermal management design.

Part Context

This component belongs to the EconoPIM™2 series by Infineon Technologies. It utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 3 diodes. The module integrates multiple power switches into a single package to reduce parasitic inductance and simplify circuit layout for industrial applications.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Do not assume compatibility based solely on voltage and current ratings; verify pinout, thermal characteristics, and switching parameters.

FAQ

What is the maximum short-circuit withstand time?

The module supports a short-circuit time of up to 10 µs.

What is the rated resistance of the integrated NTC sensor?

The rated resistance (R25) of the NTC thermistor is 5.00 kΩ at 25°C.

What is the isolation test voltage?

The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.

FP50R07N2E4BOSA1FP50R07N2E4BOSA1

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