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The FP50R07N2E4BOSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes with an NTC sensor. It features a collector-emitter voltage (VCES) of 650 V, a nominal continuous DC collector current (IC nom) of 50 A at TC=80°C, and a repetitive peak collector current (ICRM) of 100 A. The saturation voltage (VCEsat) ranges from 1.55 V to 1.95 V depending on junction temperature. Switching losses include turn-on energy (Eon) of 0.33 mJ to 0.475 mJ and turn-off energy (Eoff) of 1.80 mJ to 2.40 mJ at Tvj=150°C. Thermal resistance from junction to case is 0.800 K/W per IGBT.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm packaging and reel specifications. Ensure that the component matches the required RoHS compliance standards and material content data sheets before finalizing procurement orders.
Select this module for applications requiring a 650 V rating and up to 50 A continuous current. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Verify that the operating junction temperature range of -40°C to 150°C aligns with the system's thermal management design.
This component belongs to the EconoPIM™2 series by Infineon Technologies. It utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 3 diodes. The module integrates multiple power switches into a single package to reduce parasitic inductance and simplify circuit layout for industrial applications.
Consult official Infineon cross-reference guides for verified substitutes. Do not assume compatibility based solely on voltage and current ratings; verify pinout, thermal characteristics, and switching parameters.
The module supports a short-circuit time of up to 10 µs.
The rated resistance (R25) of the NTC thermistor is 5.00 kΩ at 25°C.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.