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The FP50R12KT4B11BPSA1 is an EconoPIM™2 IGBT module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 50 A at TC=95°C, and repetitive peak collector current (ICRM) of 100 A. The typical collector-emitter saturation voltage (VCEsat) is 1.85 V at Tvj=25°C. Total power dissipation (Ptot) is 280 W at TC=25°C. Operating junction temperature ranges from -40°C to 150°C. The module includes an integrated NTC thermistor with a nominal resistance (R25) of 5.0 kΩ.
Verify the specific ordering suffix B11 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with PressFIT assembly tools and verify that the application environment supports the specified operating temperature range of up to 150°C for switching conditions.
Select this module for applications requiring robust thermal cycling performance and low switching losses. Consider the 1200 V rating and 50 A continuous current capacity when designing motor drive or servo inverter systems. Verify gate drive requirements align with the specified threshold voltages and internal gate resistance values.
This component belongs to the EconoPIM™2 series manufactured by Infineon Technologies. It combines IGBT4 and EmCon4 chip technologies within a standardized housing. The module is designed for industrial applications where high power density and reliable operation under varying thermal loads are critical requirements.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult official Infineon resources for cross-referencing compatible modules with similar electrical ratings and mechanical footprints.