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The FP50R12KT4B16BOSA1 is a three-phase Power Integrated Module (PIM) manufactured by Infineon Technologies. It utilizes Trench Field Stop IGBT4 technology and EmCon4 diodes within an AG-ECONO2-4 package. The module features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, total power dissipation of 280 W, and an operating temperature range from -40°C to +150°C. It integrates a built-in NTC thermistor for thermal monitoring.
Verify the specific suffix B16 against official Infineon documentation to confirm pinout compatibility and internal configuration differences compared to standard variants like BOSA1 or B15. Ensure the ordering part number matches the exact revision required for your application design to avoid integration errors.
Select this module when a combined rectifier and inverter solution is required to reduce system footprint and wiring complexity. The 1200 V rating suits medium-voltage industrial applications, while the 50 A current capacity supports moderate power loads. Verify that the AG-ECONO2-4 mechanical dimensions fit the available heatsink space.
This component belongs to the EconoPIM series, designed to consolidate multiple power stages. It shares the core IGBT4 die technology with other FP50R12KT4 variants but differs in packaging suffixes and potential internal configuration options defined by the manufacturer's specific ordering codes.
Direct substitutes include FP50R12KT4BOSA1 and FP50R12KT4G_B15. Verify mechanical mounting hole patterns and terminal assignments before swapping, as different suffixes may indicate variations in included components or pin configurations.